Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To prevent an alloy layer, etc., from remaining on a semiconductor surface and the surface from reacting on an etching solution by carrying out mesa etching and etching of electrode metal with the semiconductor surface covered with an insulator film. CONSTITUTION:On the surface of semiconductor substrate 11, insulator film 14 is formed. Next, a window is made in film 14 at a fixed place. In this window, electrode metal 12 is formed. On electrode metal 12 and its circumference, photo resist film 13 is formed. Next, this film 13 used as a mask to etch insulator film 14. Then, films 13 and 14 are used as a mask to etch the surface of semiconductor substrate 11 in a mesa shape. In this case, side etching of semiconductor 11 under film 14 is carried out until a place extremely close to the junction part between metal 12 and film 14. This method prevents an alloy layer, etc., formed at the interface between semiconductor 11 and metal 12, from remaining on the surface of semiconductor 11 and the surface from reacting on an etching solution because the surface of semiconductor 11 is covered with film 14.

Inventors

• 👤 Naoyuki Tsuda

Bibliographic Details