Patent JPS53987A successfully refreshed from Google Patents.
JPS53987A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Hitachi Ltd
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Filing: 1976-06-25
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Granted: —
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Expires: 1996-06-25
Abstract
Abstract PURPOSE: To reduce fluctuations in offset voltage by providing a hole element in the zones on a rectangular somiconductor substrate, which zones are defined by parallel lines drawn at a space that is 7π of the diagonal line of the substrate on its both sides, except for the region included in the parallel lines. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Hisao Nozawa
- 👤 Hiroshi Yamamoto
- 👤 Masatoshi Utaka
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-30 07:03
CPC Classifications
—
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
JPS49134286A
Cited
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