Patent JPS5384582A successfully refreshed from Google Patents.
JPS5384582A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Manufacture for light emitting element
Assignee: Fujitsu Ltd
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Filing: 1976-12-29
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Granted: —
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Expires: 1996-12-29
Abstract
Abstract PURPOSE: To enable the diffusion at a low concentration, by using Ga-Zn alloy in the semiconductor package as the diffusing source, in the impurity diffusing method to the III-V group intermetallic compound semiconductor. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Yasogo Abe
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-03 22:48
CPC Classifications
—
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