Patent JPS5380183A successfully refreshed from Google Patents.
JPS5380183A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1976-12-25
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Granted: —
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Expires: 1996-12-25
Abstract
Abstract PURPOSE: To avoid the suction of Si due to the Al layer, the second layer electrode wiring, and thus to enhance the emitter-base dielectric strength,, by making a high fusing point metal layer, the first layer electrode wiring, contain Si. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Toshihiko Ono
- 👤 Kazuo Tanaka
- 👤 Kenichi Imai
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-08 15:08
CPC Classifications
—
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