Patent US5220651A successfully refreshed from Google Patents.
Patent JPS5378181A successfully refreshed from Google Patents.
JPS5378181A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device and its manufacture
Assignee: Hitachi Ltd
•
Filing: 1976-12-22
•
Granted: —
•
Expires: 1996-12-22
Abstract
Abstract PURPOSE: For the easing of the impurity concentration gradient at a PN junction, the impurity of a large diffusion coefficient is diffused to the junction boundary surface at a low concentration to obtain the improved dielectric strength and stabilized element characteristics, thereby realizing its long life. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Yoshiaki Kamigaki
- 👤 Kiyoo Ito
- 👤 Hiroo Masuda
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-29 06:55
CPC Classifications
—
Claims Analysis
Total Claims: 0
No claims parsed yet. Click Sync Now above to re-index claims from Google Patents.
References Cited (Backward Citations)
JPS5119980A
Cited
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.