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JPS5373072A Expired / Lapsed JP ⏱️ 0.0 years remaining

Formation of oxidized film

Assignee: Sony Corp
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Filing: 1976-12-13
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Granted: —
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Expires: 1996-12-13
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Abstract

Abstract PURPOSE: To form an oxidized film containing no impurity by contracting the defect inside a substrate through heat treatment after the formation an oxide containing halogen atoms on the semiconductor layer. COPYRIGHT: (C)1978,JPO&Japio

Inventors

  • 👤 Seiji Kawato

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-09 04:33
CPC Classifications
—

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