Patent JPS5368581A successfully refreshed from Google Patents.
JPS5368581A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Hitachi Ltd
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Filing: 1976-12-01
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Granted: —
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Expires: 1996-12-01
Abstract
Abstract PURPOSE: To obtain a MOSFET of high dielectric strength and stability by easing the field concentration near gate electrode end with the field plate effect of source electrode, protecting a high resistance layer from the effect of external leakage charge by the source electrode and further removing the reverse field effect for the drain region of the source electrode. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Takeaki Okabe
- 👤 Isao Yoshida
- 👤 Shikayuki Ochi
- 👤 Hideshi Ito
- 👤 Masatomo Furuumi
- 👤 Tatsu Toriyabe
- 👤 Mineo Katsueda
- 👤 Yukio Shirota
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-06 19:57
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/111; H10D64/112; H10D30/00; H10D30/60; H10D30/601; H10D30/603
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
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