Patent JPS5367368A successfully refreshed from Google Patents.
JPS5367368A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Sony Corp
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Filing: 1976-11-29
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Granted: —
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Expires: 1996-11-29
Abstract
Abstract PURPOSE: The insulation puncture at the edge of a PN junction is prevented to improve its dielectric strength, so that the semiconductor device can be obtained which is easy to manufacture like a planar structure and has high reliability and whose dielectric strength is equivalent to that of a mesa type (bevel structure). COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Akiyasu Ishitani
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-30 14:16
CPC Classifications
—
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