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JPS536582A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Production of constant voltage semiconductor device
Assignee: Mitsubishi Electric Corp
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Filing: 1976-07-07
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Granted: —
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Expires: 1996-07-07
Abstract
Abstract PURPOSE:To obtain a constant voltage semiconductor device of particularly less than 5V by superposing an N type layer on an N<++> type substrate, making a P type ion-implanted layer in required poritons and forming an N<++> type layer in said layer.
Inventors
- 👤 Ideo Maeyama
- 👤 Kenji Mitsui
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-09 09:08
CPC Classifications
—
Claims Analysis
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References Cited (Backward Citations)
JPS5011780A
Cited
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