Patent JPS5355986A successfully refreshed from Google Patents.
JPS5355986A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Manufacture of semiconductor device
Assignee: Toshiba Corp
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Filing: 1976-07-07
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Granted: —
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Expires: 1996-07-07
Abstract
Abstract PURPOSE: To avoid lowering of the threeshold voltage and the voltage/capacitance characteristics for the element which contains a singleor multi-layer Si substrate using a process in which no contained impurity is evaporated from the exposed multi-crystal Si layer due to the atmosphere produced when the second gate oxidationis carried out. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Nozomi Harada
- 👤 Nobuhisa Kubota
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-09 02:53
CPC Classifications
H; H10; H10D; H10D44/00; H10D44/01; H10D44/041; H10B; H10B12/00; H10B12/30; H10B69/00; H10P; H10P32/00; H10P32/30; H10P32/302; H10W; H10W20/00; H10W20/01; Y; Y10; Y10S; Y10S148/00; Y10S148/025; Y10S148/051; Y10S148/053; Y10S148/117; Y10S148/122
Claims Analysis
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References Cited (Backward Citations)
JPS4976478A
Cited
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