Patent JPS5339880A successfully refreshed from Google Patents.
JPS5339880A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Field effect type semiconductor device and its production
Assignee: Hitachi Ltd
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Filing: 1976-09-24
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Granted: —
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Expires: 1996-09-24
Abstract
Abstract PURPOSE: To obtain a FET having high mutual conductances and breakdown voltage by encircling the n layer on a P type substrate with an n + layer and P + isolating layer and forming a p layer adjoining to the N + layer in the n layer. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Yasuo Taira
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-01 02:23
CPC Classifications
—
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