Patent JPS5334483A successfully refreshed from Google Patents.
JPS5334483A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Substrate for semiconductor integrating circuit
Assignee: Hitachi Ltd
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Filing: 1977-09-09
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Granted: —
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Expires: 1997-09-09
Abstract
Abstract PURPOSE: To obtain the IC substrate superior in electric performance, by inserting the multi crystal Si layer between the mono crystal island domain and the contact layer, in adhering and bonding two semiconductor substrates via oxide dielectric insulating layer. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Takaya Suzuki
- 👤 Tatsuya Kamei
- 👤 Satoru Ogiwara
- 👤 Takuzo Ogawa
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-28 23:40
CPC Classifications
—
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