JPS5334483A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Substrate for semiconductor integrating circuit
Assignee: Hitachi Ltd
•
Filing: 1977-09-09
•
Granted: —
•
Expires: 1997-09-09
Abstract
Abstract PURPOSE: To obtain the IC substrate superior in electric performance, by inserting the multi crystal Si layer between the mono crystal island domain and the contact layer, in adhering and bonding two semiconductor substrates via oxide dielectric insulating layer. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Takaya Suzuki
- 👤 Tatsuya Kamei
- 👤 Satoru Ogiwara
- 👤 Takuzo Ogawa
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-28 10:19
CPC Classifications
—
Claims Analysis
Total Claims: 0
No claims parsed yet. Click Sync Now above to re-index claims from Google Patents.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.