Patent JPS5333587A successfully refreshed from Google Patents.
JPS5333587A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Insulated gate type field effect transistor
Assignee: Hitachi Ltd
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Filing: 1976-09-10
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Granted: —
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Expires: 1996-09-10
Abstract
Abstract PURPOSE: To escape the moisture contained in resin to the outside and obtain MOSFETs of high reliability by providing void regions in a part of the drain electrodes of polyimide resin, PIQ resin insulating and isolating between drain and source. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Isao Yoshida
- 👤 Kiichiro Mukai
- 👤 Shigeru Takahashi
- 👤 Takeaki Okabe
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-08 01:12
CPC Classifications
—
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