Patent JPS5333580A successfully refreshed from Google Patents.
JPS5333580A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Production of semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1976-09-09
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Granted: —
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Expires: 1996-09-09
Abstract
Abstract PURPOSE: To form a stable Si 3 N 4 film by heating a Si wafer in an N 2 gas atmosphere, with O 2 concentration being made less than 0.1 ppm and moisture concentration 1 to 3 ppm. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Takashi Ito
- 👤 Takao Nozaki
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-03 16:40
CPC Classifications
—
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