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Patent JPS5331971A successfully refreshed from Google Patents.
JPS5331971A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Forming method of metal oxide film or semiconductor oxide film
Assignee: NTT Inc
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Filing: 1976-09-06
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Granted: —
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Expires: 1996-09-06
Abstract
Abstract PURPOSE:To make an oxide layer of a specified thickness and a desired shape in an arbitrary depth position by implating oxygen ions then heat-treating the substrate in an inert gas.
Inventors
- 👤 Katsutoshi Izumi
- 👤 Masanobu Doken
- 👤 Akira Ariyoshi
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-31 18:30
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/48
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
US3897274A
Cited
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