Patent JPS5331964A successfully refreshed from Google Patents.
JPS5331964A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Production of semiconductor substrates
Assignee: NTT Inc
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Filing: 1976-09-06
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Granted: —
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Expires: 1996-09-06
Abstract
Abstract PURPOSE: To make an oxide film between substrate layers and form a distortionfree epitaxial layer on the substrate by acceleration-implanting O 2 ions the substrate and heat-treating the substrate. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Katsutoshi Izumi
- 👤 Masanobu Doken
- 👤 Akira Ariyoshi
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-04 18:51
CPC Classifications
—
Claims Analysis
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References Cited (Backward Citations)
JPS5099482A
Cited
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