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Patent JPS5316593A successfully refreshed from Google Patents.
JPS5316593A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor photo detector
Assignee: Hitachi Ltd
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Filing: 1976-07-30
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Granted: —
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Expires: 1996-07-30
Abstract
Abstract PURPOSE: To obtain a photo detector of a high quantum efficiency and a wide wavelength band by forming a part of a p layer or π layer or a part of the p layer and π layer with mixed crystals of Si and Ge of a forbidden band width smaller than of Si. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Hirobumi Ouchi
- 👤 Masahiro Okamura
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-04 05:37
CPC Classifications
—
Claims Analysis
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References Cited (Backward Citations)
JPS49122293A
Cited
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