Patent JPS53147481A successfully refreshed from Google Patents.
JPS53147481A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device and production of the same
Assignee: NTT Inc
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Filing: 1977-05-27
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Granted: —
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Expires: 1997-05-27
Abstract
Abstract PURPOSE: To avert the production of internal stress and obtain good characteristics by forming recesses in a semiconductor substrate, implanting N 2 ions only to the bottom parts thereof, forming a thick oxide film on regions other than the implanted region through making use of the difference in the rate of oxidation, removing the implanted regions and forming high impurity concentration regions there. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Yoshiharu Kobayashi
- 👤 Tetsushi Sakai
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-08 14:59
CPC Classifications
—
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