Patent JPS53147477A successfully refreshed from Google Patents.
JPS53147477A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: NTT Inc
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Filing: 1977-05-27
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Granted: —
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Expires: 1997-05-27
Abstract
Abstract PURPOSE:To stabilize characteristics of elements and achieve the maintenance of superior dielectric strength characteristics, etc. by interposing a non-insulating layer, in a state of being extended up to partial region of a semiconductor region, between a single crystal semiconductor region and an insulating layer, with said insulating layr being provided on the semiconductor region side.
Inventors
- 👤 Hisakazu Mukai
- 👤 Kotaro Kato
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-01 10:40
CPC Classifications
H; H10; H10D; H10D18/00; H10D18/251
Claims Analysis
Total Claims: 0
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