Patent JPS5314580A successfully refreshed from Google Patents.
JPS5314580A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Production of semiconductor device
Assignee: Hitachi Ltd
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Filing: 1976-07-26
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Granted: —
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Expires: 1996-07-26
Abstract
Abstract PURPOSE: To release the undulations of a substrate and obtain an interlayer insulation film of MOSFET having a mild sloped surface by growing a poly-crystalline Si layer on a semiconductor substrate, making an insulation layer through selective oxidation of said layer using a mask, then removing the mask and forming wiring extending onto the insulation film with the polycrystalline Si layer as a contact part. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Yasunobu Osa
- 👤 Yasuo Wada
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-01 21:49
CPC Classifications
—
Claims Analysis
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