Production of semiconductor device

Abstract

Abstract PURPOSE: To release the undulations of a substrate and obtain an interlayer insulation film of MOSFET having a mild sloped surface by growing a poly-crystalline Si layer on a semiconductor substrate, making an insulation layer through selective oxidation of said layer using a mask, then removing the mask and forming wiring extending onto the insulation film with the polycrystalline Si layer as a contact part. COPYRIGHT: (C)1978,JPO&Japio

Inventors

• 👤 Yasunobu Osa
• 👤 Yasuo Wada

Bibliographic Details