Patent US1578646A successfully refreshed from Google Patents.
Patent JPS53145486A successfully refreshed from Google Patents.
JPS53145486A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Protecting circuit using insulated gate field effect type transistors
Assignee: Mitsubishi Electric Corp
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Filing: 1977-05-24
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Granted: —
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Expires: 1997-05-24
Abstract
Abstract PURPOSE:To effectively prevent the dielectric breakdown of gate insulating film by increasing the threshold voltage of a parasitic MISFET so that it is operated at a high supply voltage and decreasing the threshold voltage of a protecting MISFET.
Inventors
- 👤 Haruo Nakayama
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-30 22:03
CPC Classifications
H; H10; H10D; H10D89/00; H10D89/60; H10D89/601; H10D89/811
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Total Claims: 0
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