Patent JPS53138286A successfully refreshed from Google Patents.
JPS53138286A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Manufacture of semiconductor device
Assignee: Sony Corp
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Filing: 1977-05-10
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Granted: —
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Expires: 1997-05-10
Abstract
Abstract PURPOSE:To reduce the substrate consumption by forming an etching compound layer different from the substrate onto the semiconductor substrate by injecting ions of one of O, C and N and by separating the substrate with the compand layer as a boundary after forming a device function part.
Inventors
- 👤 Takayoshi Mamine
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-09 03:31
CPC Classifications
Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
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