Patent JPS53129591A successfully refreshed from Google Patents.
JPS53129591A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Production of semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1977-04-18
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Granted: —
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Expires: 1997-04-18
Abstract
Abstract PURPOSE: To form a high-density area for channel cut with a high integration degree by ion injection after forming a field oxide film. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Izumi Tanaka
- 👤 Kazunari Shirai
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-30 20:27
CPC Classifications
—
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
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