Patent JPS53125784A successfully refreshed from Google Patents.
JPS53125784A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: NEC Corp
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Filing: 1977-04-08
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Granted: —
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Expires: 1997-04-08
Abstract
Abstract PURPOSE: To reduce the power consumption at low output levels and to establish an inverter circuit having a short charging time at a high output level, by adjusting the sizes of a depletion type transistor constituting a insulating type field effect transistor for loading and a transistor having its threshold value at around zero value. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Kazukiyo Takahashi
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-01 23:10
CPC Classifications
—
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