JPS5280784A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Insulated gate fype field-effect transistor
Assignee: Fujitsu Ltd
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Filing: 1975-12-27
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Granted: —
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Expires: 1995-12-27
Abstract
Abstract PURPOSE:To produce the SOS-IGFET which functions in a stable manner by forming a highly conductive region as desired inside the back gate on a sapphire substrate.
Inventors
- 👤 Nobuo Sasaki
- 👤 Kaoru Ikegami
- 👤 Yasuo Kobayashi
- 👤 Takashi Iwai
- 👤 Motoo Nakano
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-31 02:51
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6708
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
JPS51135373A
Cited
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