JPS51135373A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: National Institute of Advanced Industrial Science and Technology
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Filing: 1975-05-20
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Granted: —
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Expires: 1995-05-20
Abstract
Abstract PURPOSE:in SOS'MOS, to prevent any increase in the leakage current by making the substrate patential and that of the source the same.
Inventors
- 👤 Yoshio Nishi
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-02 15:40
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6708; H10D30/6706; H10D30/6758; H10D30/6759; H10W; H10W20/00; H10W20/01; H10W20/021
Claims Analysis
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References Cited (Backward Citations)
JPS5034176A
Cited
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