Patent JPS5265686A successfully refreshed from Google Patents.
JPS5265686A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Production of mos semiconductor device
Assignee: Sharp Corp
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Filing: 1975-11-27
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Granted: —
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Expires: 1995-11-27
Abstract
Abstract PURPOSE: To improve the dielectric strength of the sourcedrain junction of a MOS semiconductor device by providing a spacing between the source-drain regions and channel stoper regions and using the lowness of the impurity concentration of the semiconductor substrate. COPYRIGHT: (C)1977,JPO&Japio
Inventors
- 👤 Keizo Sakiyama
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-30 20:50
CPC Classifications
—
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