Production of insulated gate type mis semiconductor device

Abstract

Abstract PURPOSE:To reduce parasitic capacity by removing by etching the soruce, drain and gate forming portions of the insulating film on the surface of a semiconductor substrate, depositin ga polycrystalline Si layer containing an impurity of the conductivity type opposite to that of the substrate,, using this layer as a diffusion source, removing the channel portions of the insulating film by etching, repeating heat treatment several times, then forming a gate electrode.

Inventors

• 👤 Kazuo Ito
• 👤 Kuniki Saito

Bibliographic Details