Patent US3219324A successfully refreshed from Google Patents.
Patent JPS5265664A successfully refreshed from Google Patents.
JPS5265664A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Selective introduction of impurity in compound semiconductor substrate
Assignee: Sharp Corp
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Filing: 1975-11-26
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Granted: —
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Expires: 1995-11-26
Abstract
Abstract PURPOSE: To obtain a satisfactory PN junction by selectively convering and treating the surface of the impurity deposition layer on the surface of a semiconductor substrate nad diffusing an impurity under the film. COPYRIGHT: (C)1977,JPO&Japio
Inventors
- 👤 Toshiki Hijikata
- 👤 Jiyunkou Takagi
- 👤 Tadaaki Inoue
- 👤 Koji Tomita
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-05 19:03
CPC Classifications
—
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