Patent JPS5258490A successfully refreshed from Google Patents.
JPS5258490A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Hitachi Ltd
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Filing: 1975-11-10
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Granted: —
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Expires: 1995-11-10
Abstract
Abstract PURPOSE: To perform passivation positively and improve the dielectric strength of a semiconductor device by protecting the Al wiring formed on a semiconductor substrate with an oxide film of metal such as Al that can be anodized, in addition to an SiO 2 protecting film. COPYRIGHT: (C)1977,JPO&Japio
Inventors
- 👤 Hiroshi Kato
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-04 04:59
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/01; H10W72/012
Claims Analysis
Total Claims: 0
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