Patent JPS5243370A successfully refreshed from Google Patents.
JPS5243370A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Method of forming depression in semiconductor substrate
Assignee: Hitachi Ltd
•
Filing: 1975-10-01
•
Granted: —
•
Expires: 1995-10-01
Abstract
Abstract PURPOSE: To form a depression having a recess at lateral corners in a Si single crystal substrate having (100) face by using anisotropic etching and an etching mask that relieves the corners of the buldged portions. COPYRIGHT: (C)1977,JPO&Japio
Inventors
- 👤 Kaoru Niino
- 👤 Takashi Yamaguchi
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-31 21:00
CPC Classifications
—
Claims Analysis
Total Claims: 0
No claims parsed yet. Click Sync Now above to re-index claims from Google Patents.
References Cited (Backward Citations)
JPS4885084A
Cited
JPS4940389A
Cited
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.