Patent JPS5230185A successfully refreshed from Google Patents.
JPS5230185A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Process for producing semiconductor device
Assignee: Hitachi Ltd
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Filing: 1975-09-03
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Granted: —
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Expires: 1995-09-03
Abstract
Abstract PURPOSE: To provide a semiconductor integrated circuit device having a high pressure resistance, wherein the isolation zone and parasitics effects are minimized by forming the insulation layer through ion implanting method and by using the anisotropic etching. COPYRIGHT: (C)1977,JPO&Japio
Inventors
- 👤 Toru Inaba
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-09 01:46
CPC Classifications
—
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