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Patent JPS5226166A successfully refreshed from Google Patents.
JPS5226166A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semi-conductor unit
Assignee: Hitachi Ltd
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Filing: 1975-08-25
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Granted: —
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Expires: 1995-08-25
Abstract
Abstract PURPOSE:Prevention of the change in conductivity of the wiring layer, and of the deterioration of the mechanical strength of the bump electrode by introducing a base layer made of Cr, Ni, etc. under the bump electrode.
Inventors
- 👤 Hiroshi Kato
- 👤 Keiji Miyamoto
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-01 22:07
CPC Classifications
—
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