JPS52154351A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Formation of electrode contact holes in semiconductor devices
Assignee: Hitachi Ltd
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Filing: 1976-06-18
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Granted: —
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Expires: 1996-06-18
Abstract
Abstract PURPOSE: Electrode contact holes are formed highly accurately and finely by using dry etching, such as plasma etching, etc., which permits fine working of high accuracy at the time of forming through-holes in a silicon nitride film. COPYRIGHT: (C)1977,JPO&Japio
Inventors
- 👤 Yuji Hara
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-24 01:48
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