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JPS52113162A Expired / Lapsed JP ⏱️ 0.0 years remaining

Preparation of semiconductor device

Assignee: Hitachi Ltd
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Filing: 1976-03-19
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Granted: —
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Expires: 1996-03-19
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Abstract

Abstract PURPOSE: To prevent corrosion of an electrode or wiring by making the surface of a PSG layer smooth by heat treatment and thereafter, removing P. surface of a PSG layer smooth by heat treatment and thereafter, removing P. COPYRIGHT: (C)1977,JPO&Japio

Inventors

  • 👤 Tatsumi Shirasu
  • 👤 Yasutake Kuki
  • 👤 Shigeru Shimada

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-10-31 20:09
CPC Classifications
—

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