Patent JPS51148388A successfully refreshed from Google Patents.
JPS51148388A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device including mis type capacitive element
Assignee: Fujitsu Ltd
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Filing: 1975-06-14
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Granted: —
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Expires: 1995-06-14
Abstract
Abstract PURPOSE: To manufacture a MIS type capacitive element whose Q is large and which is small and large capacity with high pressure resistance by using a silicon nitrized film as a dielectric film. COPYRIGHT: (C)1976,JPO&Japio
Inventors
- 👤 Takashi Ito
- 👤 Masaichi Shinoda
- 👤 Motoo Nakano
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-30 11:43
CPC Classifications
—
Claims Analysis
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References Cited (Backward Citations)
JPS48102980A
Cited
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