Patent JPS51147186A successfully refreshed from Google Patents.
JPS51147186A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1975-06-12
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Granted: —
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Expires: 1995-06-12
Abstract
Abstract PURPOSE:To remove kink phenomenon in VD-ID characteristic by setting up under a source for the contact part to equalize the potential of semiconductor layer on the insulating substrate and that of source at MOST OF SOS structure.
Inventors
- 👤 Nobuo Sasaki
- 👤 Toru Inaba
- 👤 Motoo Nakano
- 👤 Yasuo Kobayashi
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-27 09:02
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6708
Claims Analysis
Total Claims: 0
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