Thin film manufacturing method

Abstract

Abstract Translated from Japanese (57)【要約】 （修正有） 【課題】 原子層蒸着法による薄膜製造方法。 【解決手段】 基板がローディングされたチャンバ１を 所定の温度と圧力に保つ段階１００と、チャンバ１に第 １反応物を注入し、基板上に化学吸着させる段階２００ と、化学吸着した第１反応物が形成された基板３を含む チャンバに不活性ガスで１次パージして化学吸着した第 １反応物上に物理吸着した第１反応物を残す段階３００ と、化学吸着及び物理吸着した第１反応物１１が形成さ れた基板を含むチャンバに第２反応物を注入及び反応さ せ薄膜を形成する段階４００と、薄膜が形成されたチャ ンバに不活性ガスで２次パージする段階５００を含む、 薄膜製造方法。 (57) [Summary] (with correction) [PROBLEMS] A method of manufacturing a thin film by an atomic layer deposition method. SOLUTION: A step 100 in which a chamber 1 in which a substrate is loaded is maintained at a predetermined temperature and pressure, and a step 200 in which a first reactant is injected into the chamber 1 and chemically adsorbed on the substrate. Step 300 of first purging with inert gas into the chamber containing the substrate 3 on which the chemically adsorbed first reactant is formed to leave the physically adsorbed first reactant on the chemically adsorbed first reactant. And 400, injecting and reacting the second reactant into the chamber including the substrate on which the chemically adsorbed and physically adsorbed first reactant 11 is formed, and forming an inert gas in the chamber where the thin film is formed. Including a secondary purging stage 500; Thin film manufacturing method.

Inventors

• 👤 Somin Ri
• 👤 相 ▲みん▼ 李
• 👤 Eikan Kin
• 👤 榮 寛 金
• 👤 Chang-Soo Park
• 👤 昌 洙 朴

Bibliographic Details