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JPH1091925A Expired / Lapsed JP ⏱️ 0.0 years remaining

Ferromagnetic tunnel junction

Assignee: TDK Corp
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Filing: 1996-09-19
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Granted: —
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Expires: 2016-09-19
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Abstract

Abstract PROBLEM TO BE SOLVED: To obtain a high MR changing factor with a good reproducibility by setting the barrier potential made by an insulation layer to the range of a specific eV in the ferromagnetic tunnel joint in which a first ferromagnetic layer, an insulation layer and a second ferromagnetic layer are successively laminated. SOLUTION: In the ferromagnetic tunnel joint, a first ferromagnetic layer 1, an insulation layer 3 and a second ferromagnetic layer 2 are successively laminated on an appropriate insulation supporting base plate 4. In this construction, the barrier potential made by the layer 3 is set in the range of 0.5 to 3eV. This potential is due to the fact that if the barrier potential exceeds 3eV, no high MR changing factor is obtained and it is estimated that no tunnel current flows. On the other hand, if the barrier potential becomes less than 0.5eV, not expected high MR changing factor is obtained. Thus, if the barrier potential is set within the range of 0.5 to 3eV, a stable and antiferromagnetic coupling is produced through the layer 3 between the layers 1 and 2.

Inventors

  • 👤 Taro Oike
  • 👤 太郎 大池
  • 👤 Kiyoshi Noguchi
  • 👤 潔 野口
  • 👤 Masashi Sano
  • 👤 正志 佐野
  • 👤 Manabu Ota
  • 👤 学 太田
  • 👤 Satoru Araki
  • 👤 悟 荒木

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-07 08:42
CPC Classifications
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