Thin film formation method

Abstract

Abstract PROBLEM TO BE SOLVED: To prepare a thin film having good crystallinity and orientation by previously bleaching the surface of a substrate with a substance containing an alkali (earth) metal in a method for forming a thin film by depositing and crystallizing a film forming material on a glass substrate by a laser abrasion method. SOLUTION: A laser abrasion apparatus is shown in the figure. A glass substrate 16 is immersed in an aqueous solution of 1N NaOH (having 40 deg.C liquid temperature) for 10min and lightly washed with pure water and dried and set into a film-forming chamber 10. The interior of the film-forming chamber 10 is evacuated and partially ozonized oxygen gas is fed thereto. The glass substrate 16 is heated to a prescribed temperature and laser beam L is irradiated to ZnO target 15. ArF excimer laser is used as the light source unit 20. The film-forming material is released from the ZnO target 15 by the irradiation and deposited on the glass substrate 16 to crystallize the film forming material. The film-forming rate is kept to 4nm/min. The glass substrate temperature is set to 500 deg.C and the oxygen gas pressure is set to 6×10<-4> Torr to form ZnO thin film having 200nm thickness.

Inventors

• 👤 Shunichi Hayamizu
• 👤 俊一 速水
• 👤 Tomoji Kawai
• 👤 知二 川合
• 👤 Hitoshi Tabata
• 👤 仁 田畑

Bibliographic Details