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JPH0940683A Expired / Lapsed JP ⏱️ 0.0 years remaining

High purity Ti complex, method for producing the same, and liquid composition for forming BST film

Assignee: Mitsubishi Materials Corp
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Filing: 1995-07-31
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Granted: —
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Expires: 2015-07-31
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Abstract

Abstract Translated from Japanese (57)【要約】 【課題】 熱分解温度が高く、高純度なTi錯体を提供 する。 【解決手段】 cis−Ti(O−t−Bu) 2 (DP M) 2 :Ti(O−t−Bu) 4 の有機溶媒溶液にHD PMを加えて加熱還流してcis−Ti(O−t−B u) 2 (DPM) 2 結晶を得る。この高純度Ti錯体と Ba(DPM) 2 及び/又はSr(DPM) 2 とを有機 溶媒に溶解したBST膜形成用液体組成物。 【化4】 【効果】 CVD法により、段差被覆性が良好で、高純 度で電気特性に優れたTiO膜を成膜できる。溶液供給 法により、所望の膜組成のBST膜を成膜できる。 (57) Abstract: A high-purity Ti complex having a high thermal decomposition temperature is provided. SOLUTION: cis-Ti (Ot-Bu) 2 (DP M) 2 : HD in an organic solvent solution of Ti (Ot-Bu) 4 Add PM and heat to reflux to cis-Ti (Ot-B u) 2 (DPM) 2 crystals are obtained. A liquid composition for forming a BST film, wherein this high-purity Ti complex and Ba (DPM) 2 and / or Sr (DPM) 2 are dissolved in an organic solvent. Embedded image [Effect] By the CVD method, it is possible to form a TiO film having good step coverage and high purity and excellent electric characteristics. A BST film having a desired film composition can be formed by the solution supply method.

Inventors

  • 👤 Hiroto Uchida
  • 👤 寛人 内田
  • 👤 Atsushi Sai
  • 👤 篤 齋
  • 👤 Kazuo Wakabayashi
  • 👤 和夫 若林
  • 👤 Katsumi Ogi
  • 👤 勝実 小木

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-09 01:29
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