Substrate having Al alloy layer as wiring layer and method of manufacturing the same

Abstract

Abstract PURPOSE:To provide a substrate formed with a wiring layer capable of lowering a resistance value and sufficiently suppressing the generation of hillocks, whiskers, etc., by forming the wiring layer in such a manner that the concn. of metal, exclusive of Al, increases successively in the layer thickness direction from the substrate side. CONSTITUTION:A gate electrode GT is formed of a second conductive film g2 which is a single layer. For example, an aluminum alloy film formed by sputtering is used as the second conductive film g2 and is provided thereon with an anodically oxidized film AOF. The Al alloy film is an alloy film formed by contg. Ta in Al. The second conductive film g1 consisting of such Al alloy film is so constituted that the concn. of the Ta is successively higher from the base to the surface on the lower transparent glass substrate SUB 1 side. The wiring layer constituted in such a manner is formed by containing the metal exclusive of the Al in the high concn. state thereof in its surface and, therefore, the generation of the so-called hillocks or whiskers, etc., is sufficiently suppressed.

Inventors

• 👤 Kenichi Kase
• 👤 賢一 加瀬
• 👤 Norio Tsukii
• 👤 教男 月井
• 👤 Kazuo Shirohashi
• 👤 和男 白橋
• 👤 Hideaki Yamamoto
• 👤 英明 山本

Bibliographic Details