Inspection method of wafer for manufacturing light emitting device

Abstract

Abstract PURPOSE:To execute inspection of wafers for manufacturing a light emitting element in the wafer stage. CONSTITUTION:A wafer for manufacturing a light emitting element having the hetero-structure where a p-type clad layer 11, a p-type active layer 12 and an n-type clad layer 13 are sequentially formed on a semiconductor substrate 10 is irradiated with the light beam 15 including wavelength which is not absorbed by the n-type clad layer 13 but by the p-type active layer 12 to find a fault, for example, by detecting a photoluminescence light beam 16 which has increased due to generation of a conductivity type inverted layer such as the n-type inverted layer 14. In the case that the double-hetero structure is composed of the GaAlAs mixed crystal type compound semiconductor, the light beam 15 including wavelength ranging from 600nm to 650nm is used for irradiation. If the fault is caused by missing of active layer, it can be detected by the use of a light beam reflected from the surface of the semiconductor substrate 10.

Inventors

• 👤 Masahito Yamada
• 👤 雅人 山田
• 👤 Makoto Kawasaki
• 👤 真 川崎
• 👤 Yutaka Tamura
• 👤 豊 田村

Bibliographic Details