Thermoelectric device and method for manufacturing thermoelectric device

Abstract

Abstract Translated from Japanese (57)【要約】 【目的】 熱電半導体薄膜部以外の高温端面と低温端面 の間を真空断熱部とすることにより熱電変換の高効率化 が達成できる超薄型・軽量な熱電装置、およびその熱電 装置を歩留まり良く、低コストで大量に生産できる製造 方法を提供する。 【構成】 基板８の上面にパターニングした電極膜部１ ０を設け、この上面に一対のＰ型とＮ型の熱電半導体薄 膜部１１、１２を設け、熱電半導体薄膜部１１、１２を 形成していない基板上には多結晶シリコン膜部４４を設 け、さらにＰ型およびＮ型の熱電半導体薄膜部１１、１ ２の上面に接する電極膜部１３を設けることによりＰ型 熱電半導体薄膜部１１およびＮ型熱電半導体薄膜部１２ を交互に電気的に直列にかつ熱的に並列に配列した後、 多結晶シリコン膜部４４をエッチングして空洞を形成 し、真空中でエッチ孔を封止して真空断熱部１４を形成 する。 (57) [Abstract] [Purpose] An ultra-thin and lightweight thermoelectric device that can achieve high efficiency of thermoelectric conversion by using a vacuum heat insulating part between the high temperature end face and the low temperature end face other than the thermoelectric semiconductor thin film part, and its Provided is a manufacturing method capable of mass-producing a thermoelectric device with a high yield and at low cost. [Structure] Electrode film portion 1 patterned on the upper surface of substrate 8 0 is provided, a pair of P-type and N-type thermoelectric semiconductor thin film portions 11 and 12 are provided on the upper surface, and a polycrystalline silicon film portion 44 is provided on the substrate on which the thermoelectric semiconductor thin film portions 11 and 12 are not formed, Furthermore, P-type and N-type thermoelectric semiconductor thin film portions 11 and 1 The P-type thermoelectric semiconductor thin film portion 11 and the N-type thermoelectric semiconductor thin film portion 12 are provided by providing the electrode film portion 13 in contact with the upper surface of Alternately arranged electrically in series and thermally in parallel, The polycrystalline silicon film portion 44 is etched to form a cavity, and the etch hole is sealed in vacuum to form the vacuum heat insulating portion 14.

Inventors

• 👤 Fumitoshi Nishiwaki
• 👤 文俊 西脇
• 👤 Hiroyoshi Tanaka
• 👤 博由 田中

Bibliographic Details