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JPH0583068A Expired / Lapsed JP ⏱️ 0.0 years remaining

Surface acoustic wave device

Assignee: Sumitomo Electric Industries Ltd
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Filing: 1991-09-25
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Granted: —
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Expires: 2011-09-25
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Abstract

Abstract Translated from Japanese (57)【要約】 【目的】 より高い周波数域で作動することができ、か つ損失の少ない表面弾性波素子を提供する。 【構成】 ダイヤモンド層1と、ダイヤモンド層1上に 設けられる圧電体層3と、ダイヤモンド層1と圧電体層 3の間に設けられ、両層に密着するくし型電極2a、2 bを備える表面弾性波素子において、くし型電極2a、 2bがダイヤモンド層において集束イオンビームにより イオン注入された領域であることを特徴とする素子(図 1(c)参照)。 (57) [Abstract] [Purpose] To provide a surface acoustic wave device that can operate in a higher frequency range and has less loss. A diamond layer 1, a piezoelectric layer 3 provided on the diamond layer 1, and comb-shaped electrodes 2a, 2 provided between the diamond layer 1 and the piezoelectric layer 3 and adhered to both layers. In the surface acoustic wave device including b, the comb-shaped electrode 2a, The element 2b is a region in the diamond layer that is ion-implanted by a focused ion beam (see FIG. 1C).

Inventors

  • 👤 Shinichi Shikada
  • 👤 真一 鹿田
  • 👤 Hideaki Nakahata
  • 👤 英章 中幡
  • 👤 Akihiro Yagou
  • 👤 昭広 八郷
  • 👤 Naoharu Fujimori
  • 👤 直治 藤森

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-10-26 06:21
CPC Classifications
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