Semiconductor photodetector

Abstract

Abstract PURPOSE:To enable a semiconductor photodetective element to be lessened in noise and manufacturing cost and easily integrated with an electronic circuit by a method wherein a semi-insulating semiconductor possessed of a deep interband level is used as an active layer. CONSTITUTION:A semi-insulating semiconductor serves as an active layer 1, where photoelectric conversion takes place in the semi-insulating semiconductor in such a manner that electrons 63-1 are excited 62-1 from a deep interband level 4 caused by the inner defects inside the semiconductor or impurities to a conduction band 2 or holes 63-2 are excited 62-2 from the interband level 4 to a valence band 3. The semi-insulating semiconductor is so set as to respond to light rays longer than those correspondent to the energy band gap of the semiconductor in wavelength. At this point, a semiconductor photodetective element is formed in a PIN structure, where a semi-insulating semiconductor 10mum or more in thickness is used as a photodetective active layer. The element is also formed into a Schottky type where a semi-insulating semiconductor 10mum or more in thickness and a metal thin film are made to constitute a Schottky junction. Furthermore, the element is a metal-semiconductor-metal structure provided with a pair of Schottky junctions disposed in lateral symmetry on the same plane of the semi-insulating semiconductor.

Inventors

• 👤 Yoshihiko Mizushima
• 👤 宜彦 水島
• 👤 Kazutoshi Nakajima
• 👤 和利 中嶋
• 👤 Toru Hirohata
• 👤 徹 廣畑
• 👤 Takashi Iida
• 👤 孝 飯田
• 👤 Sadahisa Warashina
• 👤 禎久 藁科
• 👤 Kenichi Sugimoto
• 👤 賢一 杉本
• 👤 Tomoko Suzuki
• 👤 智子 鈴木
• 👤 Hirobumi Suga
• 👤 博文 菅

Bibliographic Details