Operating method for semiconductor memory device

Abstract

Abstract PURPOSE:To make a refresh characteristic satisfactory and to reduce the probability of causing a malfunction by turning a switching transistor to be in a nonconductive condition in a state in which the potentials of a bit line and a plate line are turned to the substrate potential and the equipotential of a semiconductor substrate, respectively. CONSTITUTION:After the performance of access to a memory cell 11 is operated, the driving signal transmitted from a word line 4 is stopped, and the switching transistor of the memory cell 11, for example, an MOS type transistor 17, is turned to be in the nonconductive condition. At that time, the potentials of a bit line 16 and a plate line 13 are turned to the substrate potential and the equipotential of the semiconductor substrate, respectively. Therefore, the potential of a storage node between a ferroelectrics condenser 18 and the switching transistor 17 is held to be the substrate potential and the equipotential of the semiconductor substrate even in the holding state of information stored in the memory cell 11. Thus, the refresh characteristic can be satisfactory and the probability of causing the malfunction can be reduced.

Inventors

• 👤 Kazuhide Abe
• 👤 和秀 阿部
• 👤 Yasushi Sakui
• 👤 康司 作井
• 👤 Motomasa Imai
• 👤 今井　基真

Bibliographic Details