Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To prevent disconnection of wirings of high melting point metal silicide, etc., and to accelerate by covering an Si substrate a word line polysilicon film in thickness equal or larger than the thickness of a floating gate polysilicon film to cover a step of the gate polysilicon film. CONSTITUTION:A field SiO2 film 2 is formed on an Si substrate 1 by a thermally oxidizing method, a gate oxide film 3 is formed on an element forming region surrounded by the film 2, and a floating gate polysilicon film 4 is formed on the film 3. Then, an interlayer Si02 film 5 is formed to cover the film 4, and the substrate l is covered with a word line polysilicon film 6 to become a control electrode of a capacitor in thickness equal or larger than the thickness of the film 4. A WSi2 film of high melting point metal silicide is laminated as a word line conductive film 7 to form a word line.

Inventors

• 👤 Kazuaki Yamanochi
• 👤 山ノ内　一明

Bibliographic Details